000 | 03203nam a22005175i 4500 | ||
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001 | 978-3-319-72556-7 | ||
003 | DE-He213 | ||
005 | 20220801221150.0 | ||
007 | cr nn 008mamaa | ||
008 | 171228s2018 sz | s |||| 0|eng d | ||
020 |
_a9783319725567 _9978-3-319-72556-7 |
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024 | 7 |
_a10.1007/978-3-319-72556-7 _2doi |
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050 | 4 | _aTK7867-7867.5 | |
072 | 7 |
_aTJFC _2bicssc |
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072 | 7 |
_aTEC008010 _2bisacsh |
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072 | 7 |
_aTJFC _2thema |
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082 | 0 | 4 |
_a621.3815 _223 |
100 | 1 |
_aVidor, Fábio Fedrizzi. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _954462 |
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245 | 1 | 0 |
_aZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics _h[electronic resource] / _cby Fábio Fedrizzi Vidor, Gilson Inácio Wirth, Ulrich Hilleringmann. |
250 | _a1st ed. 2018. | ||
264 | 1 |
_aCham : _bSpringer International Publishing : _bImprint: Springer, _c2018. |
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300 |
_aXVII, 179 p. 123 illus., 98 illus. in color. _bonline resource. |
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336 |
_atext _btxt _2rdacontent |
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337 |
_acomputer _bc _2rdamedia |
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338 |
_aonline resource _bcr _2rdacarrier |
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347 |
_atext file _bPDF _2rda |
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505 | 0 | _aChapter 1.Introduction -- Chapter 2.Fundamentals -- Chapter 3.Integration -- Chapter 4. Zinc Oxide Transistors -- Chapter 5.Electronic Circuits -- Chapter 6.Improvements -- Chapter 7.Conclusion and Future Perspectives. | |
520 | _aThis book describes the integration, characterization and analysis of cost-efficient thin-film transistors (TFTs), applying zinc oxide as active semiconductors. The authors discuss soluble gate dielectrics, ZnO precursors, and dispersions containing nanostructures of the material, while different transistor configurations are analyzed with respect to their integration, compatibility, and device performance. Additionally, simple circuits (inverters and ring oscillators) and a complementary design employing (in)organic semiconducting materials are presented and discussed. Readers will benefit from concise information on cost-efficient materials and processes, applied in flexible and transparent electronic technology, such as the use of solution-based materials and dispersion containing nanostructures, as well as discussion of the physical fundamentals responsible for the operation of the thin-film transistors and the non-idealities of the device. | ||
650 | 0 |
_aElectronic circuits. _919581 |
|
650 | 0 |
_aElectronics. _93425 |
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650 | 1 | 4 |
_aElectronic Circuits and Systems. _954463 |
650 | 2 | 4 |
_aElectronics and Microelectronics, Instrumentation. _932249 |
700 | 1 |
_aWirth, Gilson Inácio. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _954464 |
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700 | 1 |
_aHilleringmann, Ulrich. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _954465 |
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710 | 2 |
_aSpringerLink (Online service) _954466 |
|
773 | 0 | _tSpringer Nature eBook | |
776 | 0 | 8 |
_iPrinted edition: _z9783319725550 |
776 | 0 | 8 |
_iPrinted edition: _z9783319725574 |
776 | 0 | 8 |
_iPrinted edition: _z9783319891880 |
856 | 4 | 0 | _uhttps://doi.org/10.1007/978-3-319-72556-7 |
912 | _aZDB-2-ENG | ||
912 | _aZDB-2-SXE | ||
942 | _cEBK | ||
999 |
_c79363 _d79363 |