000 04388nam a22005175i 4500
001 978-3-030-20208-8
003 DE-He213
005 20220801215405.0
007 cr nn 008mamaa
008 190801s2020 sz | s |||| 0|eng d
020 _a9783030202088
_9978-3-030-20208-8
024 7 _a10.1007/978-3-030-20208-8
_2doi
050 4 _aTK7867-7867.5
072 7 _aTJFC
_2bicssc
072 7 _aTEC008010
_2bisacsh
072 7 _aTJFC
_2thema
082 0 4 _a621.3815
_223
245 1 0 _aHigh-Frequency GaN Electronic Devices
_h[electronic resource] /
_cedited by Patrick Fay, Debdeep Jena, Paul Maki.
250 _a1st ed. 2020.
264 1 _aCham :
_bSpringer International Publishing :
_bImprint: Springer,
_c2020.
300 _aVIII, 309 p. 221 illus., 199 illus. in color.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
505 0 _aChapter 1. Introduction -- Chapter 2.High Power High Frequency Transistors: A Materials Perspective -- Chapter 3. Isotope Engineering of GaN for Boosting Transistor Speeds -- Chapter 4. Linearity Aspects of High Power Amplification in GaN Transistors -- Chapter 5. III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA) -- Chapter 6.Plasma-Wave Propagation in GaN and Its Applications -- Chapter 7.Numerical Simulation of Distributed Electromagnetic and Plasma-wave Effect Devices -- Chapter 8.Resonant Tunneling Transport in Polar III-Nitride Heterostructures -- Chapter 9.Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes -- Chapter 10.Non-Contact Metrology for mm-wave and THz Electronics.
520 _aThis book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides “vertically integrated” coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations.
650 0 _aElectronic circuits.
_919581
650 0 _aElectronics.
_93425
650 1 4 _aElectronic Circuits and Systems.
_944082
650 2 4 _aElectronics and Microelectronics, Instrumentation.
_932249
700 1 _aFay, Patrick.
_eeditor.
_4edt
_4http://id.loc.gov/vocabulary/relators/edt
_944083
700 1 _aJena, Debdeep.
_eeditor.
_4edt
_4http://id.loc.gov/vocabulary/relators/edt
_944084
700 1 _aMaki, Paul.
_eeditor.
_4edt
_4http://id.loc.gov/vocabulary/relators/edt
_944085
710 2 _aSpringerLink (Online service)
_944086
773 0 _tSpringer Nature eBook
776 0 8 _iPrinted edition:
_z9783030202071
776 0 8 _iPrinted edition:
_z9783030202095
776 0 8 _iPrinted edition:
_z9783030202101
856 4 0 _uhttps://doi.org/10.1007/978-3-030-20208-8
912 _aZDB-2-ENG
912 _aZDB-2-SXE
942 _cEBK
999 _c77438
_d77438