| 000 | 03334nam a22005055i 4500 | ||
|---|---|---|---|
| 001 | 978-3-030-04513-5 | ||
| 003 | DE-He213 | ||
| 005 | 20220801213539.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 181213s2019 sz | s |||| 0|eng d | ||
| 020 |
_a9783030045135 _9978-3-030-04513-5 |
||
| 024 | 7 |
_a10.1007/978-3-030-04513-5 _2doi |
|
| 050 | 4 | _aTK7867-7867.5 | |
| 072 | 7 |
_aTJFC _2bicssc |
|
| 072 | 7 |
_aTEC008010 _2bisacsh |
|
| 072 | 7 |
_aTJFC _2thema |
|
| 082 | 0 | 4 |
_a621.3815 _223 |
| 100 | 1 |
_aAmiri, Iraj Sadegh. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _91816 |
|
| 245 | 1 | 0 |
_aDevice Physics, Modeling, Technology, and Analysis for Silicon MESFET _h[electronic resource] / _cby Iraj Sadegh Amiri, Hossein Mohammadi, Mahdiar Hosseinghadiry. |
| 250 | _a1st ed. 2019. | ||
| 264 | 1 |
_aCham : _bSpringer International Publishing : _bImprint: Springer, _c2019. |
|
| 300 |
_aIX, 122 p. 51 illus., 27 illus. in color. _bonline resource. |
||
| 336 |
_atext _btxt _2rdacontent |
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| 337 |
_acomputer _bc _2rdamedia |
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| 338 |
_aonline resource _bcr _2rdacarrier |
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| 347 |
_atext file _bPDF _2rda |
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| 505 | 0 | _aChapter 1. Invention and Evaluation of Transistors and Integrated Circuits -- Chapter 2. General overview of the basic structure and operation of a typical silicon on insulator metal-semiconductor field effect transistor SOI-MESFET -- Chapter 3. Modeling of Classical SOI-MESFET -- Chapter 4. Design and modeling of triple-material gate SOI-MESFET -- Chapter 5. Three-dimensional analytical model of the non-classical three-gate SOI-MESFET -- Chapter 6. Analytical investigation of subthreshold performance of SOI-MESFET devices -- Chapter 7. Future works on Silicon-on-insulator metal semiconductor field effect transistors (SOI-MESFETs). | |
| 520 | _aThis book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications. Describes the evolution of MESFET in the semiconductor industry; Discusses challenges and solutions associated with downscaling; Provides comprehensive information on the structure and operation of silicon MESFETs. | ||
| 650 | 0 |
_aElectronic circuits. _919581 |
|
| 650 | 0 |
_aElectronics. _93425 |
|
| 650 | 1 | 4 |
_aElectronic Circuits and Systems. _932774 |
| 650 | 2 | 4 |
_aElectronics and Microelectronics, Instrumentation. _932249 |
| 700 | 1 |
_aMohammadi, Hossein. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _932775 |
|
| 700 | 1 |
_aHosseinghadiry, Mahdiar. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _932776 |
|
| 710 | 2 |
_aSpringerLink (Online service) _932777 |
|
| 773 | 0 | _tSpringer Nature eBook | |
| 776 | 0 | 8 |
_iPrinted edition: _z9783030045128 |
| 776 | 0 | 8 |
_iPrinted edition: _z9783030045142 |
| 856 | 4 | 0 | _uhttps://doi.org/10.1007/978-3-030-04513-5 |
| 912 | _aZDB-2-ENG | ||
| 912 | _aZDB-2-SXE | ||
| 942 | _cEBK | ||
| 999 |
_c75309 _d75309 |
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