000 02440nmm a2200373Ia 4500
001 00006724
003 WSP
005 20220711214122.0
007 cr |uu|||uu|||
008 181219s2009 si a ob 001 0 eng
010 _z 2009279500
040 _aWSPC
_beng
_cWSPC
020 _a9789812791016
_q(ebook)
020 _z9789812791009
_q(hbk.)
050 0 4 _aTK7874
_b.L44 2009
072 7 _aTEC
_x009030
_2bisacsh
082 0 4 _a621.3815
_223
100 1 _aLiang, Yung C.
_93781
245 1 0 _aPower microelectronics
_h[electronic resource] :
_bdevice and process technologies /
_cYung C. Liang, Ganesh S. Samudra.
260 _aSingapore :
_bWorld Scientific Publishing Co. Pte Ltd.,
_c©2009.
300 _a1 online resource (432 p.) :
_bill.
538 _aMode of access: World Wide Web.
538 _aSystem requirements: Adobe Acrobat Reader.
588 _aTitle from web page (viewed December 19, 2018).
504 _aIncludes bibliographical references and index.
520 _a"This descriptive textbook provides an in-depth look at the theories and process technologies necessary for understanding modern power semiconductor devices, i.e. from the fundamentals of junction electrostatics, p-n junction devices, unipolar MOSFET, bipolar IGBT, and superjunction devices to their associated silicon wafer process technology. State-of-the-art devices based on current research and development are included in the book to widen the scope for future device generation. The detailed structure and performance merit of the devices are also presented, together with laboratory measurements and SEM photographs. Examples used in the book are based mainly on actual fabricated devices, with the process steps described in clear detail. This book is useful for senior-year undergraduate courses on power semiconductor or power electronic devices, as well as for graduate-level courses, especially those focusing on advanced device development and design aspects. Device designers and researchers will also find this book a good reference in their work."--
_cPublisher's website.
650 0 _aPower semiconductors.
_93782
650 0 _aPower electronics.
_93614
650 0 _aMicroelectronics.
_93783
650 0 _aElectronic books.
_920669
700 1 _aSamudra, Ganesh S.
_93785
856 4 0 _uhttps://www.worldscientific.com/worldscibooks/10.1142/6724#t=toc
_zAccess to full text is restricted to subscribers.
942 _cEBK
999 _c72520
_d72520