000 03736nam a22005655i 4500
001 978-94-007-6340-1
003 DE-He213
005 20200420221258.0
007 cr nn 008mamaa
008 130326s2013 ne | s |||| 0|eng d
020 _a9789400763401
_9978-94-007-6340-1
024 7 _a10.1007/978-94-007-6340-1
_2doi
050 4 _aTK7867-7867.5
072 7 _aTJFC
_2bicssc
072 7 _aTJFD5
_2bicssc
072 7 _aTEC008010
_2bisacsh
082 0 4 _a621.3815
_223
100 1 _aHellings, Geert.
_eauthor.
245 1 0 _aHigh Mobility and Quantum Well Transistors
_h[electronic resource] :
_bDesign and TCAD Simulation /
_cby Geert Hellings, Kristin De Meyer.
264 1 _aDordrecht :
_bSpringer Netherlands :
_bImprint: Springer,
_c2013.
300 _aXVIII, 140 p.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aSpringer Series in Advanced Microelectronics,
_x1437-0387 ;
_v42
505 0 _aList of Abbreviations and Symbols -- 1 Introduction -- 2 S/D Junctions in Ge: experimental -- 3 TCAD Simulation and Modeling of Ion Implants in Germanium -- 4 Electrical TCAD Simulations and Modeling in Germanium -- 5 Investigation of Quantum Well Transistors for Scaled Technologies -- 6 Implant-Free Quantum Well FETs: Experimental investigation -- 7 Conclusions Future Work and Outlook -- Bibliography -- List of Publications.
520 _aFor many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET - is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.
650 0 _aPhysics.
650 0 _aSemiconductors.
650 0 _aElectronic circuits.
650 0 _aNanotechnology.
650 0 _aOptical materials.
650 0 _aElectronic materials.
650 1 4 _aPhysics.
650 2 4 _aElectronic Circuits and Devices.
650 2 4 _aCircuits and Systems.
650 2 4 _aOptical and Electronic Materials.
650 2 4 _aSemiconductors.
650 2 4 _aNanotechnology and Microengineering.
700 1 _aDe Meyer, Kristin.
_eauthor.
710 2 _aSpringerLink (Online service)
773 0 _tSpringer eBooks
776 0 8 _iPrinted edition:
_z9789400763395
830 0 _aSpringer Series in Advanced Microelectronics,
_x1437-0387 ;
_v42
856 4 0 _uhttp://dx.doi.org/10.1007/978-94-007-6340-1
912 _aZDB-2-ENG
942 _cEBK
999 _c53015
_d53015