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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion [electronic resource] / edited by Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni.

Contributor(s): Meneghesso, Gaudenzio [editor.] | Meneghini, Matteo [editor.] | Zanoni, Enrico [editor.] | SpringerLink (Online service).
Material type: materialTypeLabelBookSeries: Integrated Circuits and Systems: Publisher: Cham : Springer International Publishing : Imprint: Springer, 2018Edition: 1st ed. 2018.Description: XIII, 232 p. 183 illus., 165 illus. in color. online resource.Content type: text Media type: computer Carrier type: online resourceISBN: 9783319779942.Subject(s): Electronic circuits | Optical materials | Electronic Circuits and Systems | Optical MaterialsAdditional physical formats: Printed edition:: No title; Printed edition:: No title; Printed edition:: No titleDDC classification: 621.3815 Online resources: Click here to access online
Contents:
Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics -- Chapter2: Lateral GaN HEMT structures -- Chapter3: Vertical GaN Transistors for Power Electronics -- Chapter4: Reliability of GaN-based Power devices -- Chapter5: Validating GaN robustness -- Chapter6: Impact of Parasitics on GaN Based Power Conversion -- Chapter7: GaN in AC/DC Power Converters -- Chapter8: GaN in Switched Mode Power Amplifiers.
In: Springer Nature eBookSummary: This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.
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Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics -- Chapter2: Lateral GaN HEMT structures -- Chapter3: Vertical GaN Transistors for Power Electronics -- Chapter4: Reliability of GaN-based Power devices -- Chapter5: Validating GaN robustness -- Chapter6: Impact of Parasitics on GaN Based Power Conversion -- Chapter7: GaN in AC/DC Power Converters -- Chapter8: GaN in Switched Mode Power Amplifiers.

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

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