Noise in Nanoscale Semiconductor Devices [electronic resource] / edited by Tibor Grasser.
Contributor(s): Grasser, Tibor [editor.]
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BookPublisher: Cham : Springer International Publishing : Imprint: Springer, 2020Edition: 1st ed. 2020.Description: VI, 729 p. 550 illus., 443 illus. in color. online resource.Content type: text Media type: computer Carrier type: online resourceISBN: 9783030375003.Subject(s): Electronic circuits | Electronics | Electronic Circuits and Systems | Electronics and Microelectronics, InstrumentationAdditional physical formats: Printed edition:: No title; Printed edition:: No title; Printed edition:: No titleDDC classification: 621.3815 Online resources: Click here to access online
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Springer Nature eBookSummary: This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
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