Fundamentals of Power Semiconductor Devices (Record no. 76221)

000 -LEADER
fixed length control field 03806nam a22004935i 4500
001 - CONTROL NUMBER
control field 978-3-319-93988-9
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20220801214326.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 180928s2019 sz | s |||| 0|eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 9783319939889
-- 978-3-319-93988-9
082 04 - CLASSIFICATION NUMBER
Call Number 621.3815
100 1# - AUTHOR NAME
Author Baliga, B. Jayant.
245 10 - TITLE STATEMENT
Title Fundamentals of Power Semiconductor Devices
250 ## - EDITION STATEMENT
Edition statement 2nd ed. 2019.
300 ## - PHYSICAL DESCRIPTION
Number of Pages XXXII, 1086 p. 838 illus., 559 illus. in color.
505 0# - FORMATTED CONTENTS NOTE
Remark 2 Introduction -- Material Properties and Transport Physics -- Breakdown Voltage -- Schottky Rectifiers -- P-i-N Rectifiers -- Power MOSFETs -- Bipolar Junction Transistors -- Thyristors -- Insulated Gate Bipolar Thyristors -- Synopsis.
520 ## - SUMMARY, ETC.
Summary, etc This textbook provides an in-depth treatment of the physics of power semiconductor devices that are commonly used by the power electronics industry. Drawing upon decades of industry and teaching experience and using numerous examples and illustrative applications, the author discusses in detail the various device performance attributes that allow practicing engineers to develop energy-efficient products. Coverage includes all types of power rectifiers and transistors and analytical models for explaining the operation of all power semiconductor devices are developed and demonstrated in each section of the book. Throughout the book, emphasis is placed on deriving simple analytical expressions that describe the underlying physics and enable representation of the device electrical characteristics. This treatment is invaluable for teaching a course on power devices because it allows the operating principles and concepts to be conveyed with quantitative analysis. The treatment focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. This new edition also includes a chapter on the impact of power semiconductor devices on energy savings and reduction of carbon emissions. Provides comprehensive textbook for courses on physics of power semiconductor devices; Includes extensive analytical formulations for design and analysis of device structures; Uses numerical simulation examples in every section to elucidate the operating physics and validate the models; Analyzes device performance attributes that enable development of real, energy-efficient products; Includes numerous exercises in each chapter to reinforce concepts introduced; Includes a chapter on the impact of power semiconductor devices on energy savings and reduction of carbon emissions.
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier https://doi.org/10.1007/978-3-319-93988-9
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type eBooks
264 #1 -
-- Cham :
-- Springer International Publishing :
-- Imprint: Springer,
-- 2019.
336 ## -
-- text
-- txt
-- rdacontent
337 ## -
-- computer
-- c
-- rdamedia
338 ## -
-- online resource
-- cr
-- rdacarrier
347 ## -
-- text file
-- PDF
-- rda
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Electronic circuits.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Electronics.
650 14 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Electronic Circuits and Systems.
650 24 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Electronics and Microelectronics, Instrumentation.
912 ## -
-- ZDB-2-ENG
912 ## -
-- ZDB-2-SXE

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